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VCE IC
= =
1700 V 800 A
ABB HiPakTM IGBT Module
5SNE 0800M170100
Doc. No. 5SYA1590-00 Oct 06
* Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques
1) 2) 2) 1)
Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2
Conditions VGE = 0 V, Tvj 25 C Tc = 80 C tp = 1 ms, Tc = 80 C
min
max 1700 800 1600
Unit V A A V W A A A s V C C C C Nm
-20 Tc = 25 C, per switch (IGBT)
20 4800 800 1600
VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 1200 V, VCEM CHIP 1700 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2
6600 10 4000 150 125 125 125 6 10 3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SNE 0800M170100
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
3)
Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf
Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 800 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
min 1700 2.0 2.3
typ
max
Unit V
2.3 2.6
2.6 2.9 4 40
V V mA mA nA V C
VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 80 mA, VCE = VGE, Tvj = 25 C IC = 800 A, VCE = 900 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 900 V, IC = 800 A, RG = 1.2 , VGE = 15 V, L = 80 nH, inductive load VCC = 900 V, IC = 800 A, RG = 1.8 , VGE = 15 V, L = 80 nH, inductive load VCC = 900 V, IC = 800 A, VGE = 15 V, RG = 1.2 , L = 80 nH, inductive load VCC = 900 V, IC = 800 A, VGE = 15 V, RG = 1.8 , L = 80 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C
-500 4.5 7.3 76 7.3 3.2 485 485 165 170 790 875 160 185 160
500 6.5
nF
ns ns ns ns
Turn-on switching energy
Eon
mJ 250 220 mJ 300 3600 24 A nH m
Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip
3) 4)
Eoff ISC L CE RCC'+EE'
tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1200 V, VCEM CHIP 1700 V Leg 1 Leg 1 TC = 25 C TC = 125 C
0.18 0.255
Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 2 of 9
5SNE 0800M170100
Diode characteristic values
Parameter Forward voltage
6)
5)
Symbol VF Irr Qrr trr Erec L AE RAA'+CC'
Conditions IF = 800 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 900 V, IF = 800 A, VGE = 15 V, RG = 1.2 L = 80 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Leg 2 Leg 2 TC = 25 C TC = 125 C
min
typ 1.65 1.7 560 730 210 385 690 975 150 270 24 0.18 0.255
max 2.0 2.0
Unit V A C ns mJ nH m
Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy Module stray inductance Resistance, terminal-chip
5) 6)
Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level
Thermal properties
Parameter IGBT thermal resistance junction to case
7)
Symbol Rth(j-c)IGBT
Conditions
min
typ
max
Unit
0.021 K/W per switch 0.036 K/W 0.024 0.048 K/W K/W
Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink
2) 2)
Rth(j-c)DIODE Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K
7)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
Parameter Dimensions Clearance distance in air Surface creepage distance Mass
7)
7)
Symbol LW da ds m
x x
Conditions
min
x
typ
x
max
Unit mm mm mm
H Typical , see outline drawing according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term:
130 140 38 10 10 15 15 900
g
Thermal and mechanical properties according to IEC 60747 - 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 3 of 9
5SNE 0800M170100
Electrical configuration
Leg 1
E1 E1
Leg 2
C2
G1
C1 C1 E2
Outline drawing
2)
E1
C2
C1
E2
E1 G1 C1
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 4 of 9
5SNE 0800M170100
1600 1400 1200 1000 IC [A] IC [A] 800 600 400 200 VGE = 15 V 0 0 1 2 VCE [V] 3 4 5
1600 VCE = 25 V 1400 25 C 125 C 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 11 12 VGE [V] 125 C
25 C
Fig. 1
Typical on-state characteristics, chip level
Fig. 2
Typical transfer characteristics, chip level
1600 17V 1400 1200 1000 IC [A] 800 600 400 200 Tvj = 25 C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V IC [A]
1600 17V 1400 1200 1000 800 600 400 200 Tvj = 125 C 0 0 1 2 3 VCE [V] 4 5 6 15V 13V 11V 9V
Fig. 3
Typical output characteristics, chip level
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 5 of 9
5SNE 0800M170100
0.90 0.80 0.70 0.60 Eon, Eoff [J] 0.50 0.40 0.30 0.20 0.10
Esw [J] = 347 x 10 x I C + 280 x 10 x I C + 97.7 x 10
-9 2 -6 -3
2.0 VCC = 900 V VGE = 15 V RGon = 1.2 ohm RGoff = 1.8 ohm Tvj = 125 C L = 80 nH Eon VCC = 900 V IC = 800 A VGE = 15 V Tvj = 125 C L = 80 nH
1.5
Eon
Eon, Eoff [J]
Eoff
1.0
0.5 Eoff
0.00 0 400 800 IC [A] 1200 1600
0.0 0 5 10 15 20 25 RG [ohm]
Fig. 5
Typical switching energies per pulse vs collector current
Fig. 6
Typical switching energies per pulse vs gate resistor
10
10 VCC = 900 V IC = 800 A VGE = 15 V Tvj = 125 C L = 80 nH td(on), tr, td(off), tf [s]
td(off)
td(off) td(on), tr, td(off), tf [s] 1 td(on)
td(on) 1 tr
tf 0.1 tr
VCC = 900 V RGon = 1.2 ohm RGoff = 1.8 ohm VGE = 15 V Tvj = 125 C L = 80 nH 0.1 400 800 IC [A] 1200 1600 0 5 10 15 20
tf
0.01 0
25
RG [ohm]
Fig. 7
Typical switching times vs collector current
Fig. 8
Typical switching times vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 6 of 9
5SNE 0800M170100
100 Cies
20
VCC = 900 V 15
VCC = 1300 V VGE [V] VGE = 0V fOSC = 1 MHz VOSC = 50 mV 1 0 5 10 15 20 VCE [V] 25 30 35 0 0 1 2 3 Qg [C] 4 5 6 C [nF] 10 Coes 10
Cres 5
IC = 800 A Tvj = 25 C
Fig. 9
Typical capacitances vs collector-emitter voltage
Fig. 10
Typical gate charge characteristics
2.5 VCC 1200 V, Tvj = 125 C VGE = 15 V, RG = 1.8 ohm 2
1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 VCE [V] 1500 2000
Fig. 11
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 7 of 9
5SNE 0800M170100
Erec [mJ] = -0.105 x 10-3 x I F2 + 352 x 10-3 x I F + 49
400 Irr
800
400 Irr
800
Erec [mJ], Qrr [C]
300 Erec [mJ] Qrr 200
600 Irr [A], Qrr [C]
300
Qrr
RG = 1.5 ohm RG = 1.2 ohm
600
Erec
0 0 400 800 IF [A] 1200 1600
0
0 0 1 2 3 4 5 di/dt [kA/s]
RG = 22 ohm
100
VCC = 900 V VGE = 15 V RG = 1.2 ohm Tvj = 125 C L = 80 nH
Erec 200 100
RG = 8.2 ohm
RG = 3.9 ohm
400
200
RG = 2.2 ohm
400
VCC = 900 V IF = 800 A Tvj = 125 C L = 80 nH
200
0
Fig. 12
Typical reverse recovery characteristics vs forward current
Fig. 13
Typical reverse recovery characteristics vs di/dt
1600 1400 25C 1200 125C 1000 IF [A] 800 600 400 200 0 0 0.5 1 VF [V] 1.5 2 2.5 0 0 500 1000 VR [V] 1500 2000 IR [A] 1200 1600 VCC 1200 V di/dt 5 kA/s Tvj = 125 C
800
400
Fig. 14
Typical diode forward characteristics, chip level
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06 page 8 of 9
Irr [A]
5SNE 0800M170100
0.1 Zth(j-c) Diode
Analytical function for transient thermal impedance:
Zth(j-c) [K/W] IGBT, DIODE
Zth(j-c) IGBT 0.01
Z th (j-c) (t) = R i (1 - e -t/ i )
i =1
2 3.6 20.3 5.78 29.6 i 1 15.2 202 25.3 210 3 1.49 2.01 2.6 7.01 4 0.74 0.52 2.52 1.49
IGBT
n
Ri(K/kW) i(ms) Ri(K/kW) i(ms)
0.001
0.0001 0.001 0.01 0.1 t [s] 1 10
Fig. 16
Thermal impedance vs time
For detailed information refer to: * 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays * 5SYA 2043-01 Load - cycle capability of HiPaks * 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors
DIODE
Doc. No. 5SYA1590-00 Oct 06

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